Transport scaling limits of ovonic Devices: a simulative approach

The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport models based on a set of equations that provide a good physical grasp of the microscopic process at hand. The predictivity of the approach has been confirmed through the comparison with recent experimental results where the parasitic effects have been reduced by the use of top-technology measuring equipments. The present analysis is performed for the AgInSbTe chalcogenide, since this material exibits a steep threshold-switching dynamics which makes it promising for high-speed non-volatile memory applications.