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Selfconsistent LMTO calculation for semiconductor clean surfaces

Articolo
Data di Pubblicazione:
1989
Citazione:
Selfconsistent LMTO calculation for semiconductor clean surfaces / Ossicini, Stefano; Bisi, Olmes. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 211/212:(1989), pp. 572-577. [10.1016/0039-6028(89)90816-7]
Abstract:
We show that reliable selfconsistent densities of states and energy bands at the semiconductor-vacuum interface can be obtained by the all-electron linear muffin-tin orbitals (LMTO) method in the atomic sphere approximation (ASA). Our calculation is based on the empty sphere technique, i.e. interstitial spheres with zero atomic number, firstly introduced to well describe within the muffin-tin potential approximation the behaviour of solids with low coordination number, like group IV semiconductors. We show that the semiconductor-vacuum interface can be well described if the semi-infinite vacuum region is simulated by a semi-infinite empty sphere solid. The calculation is firstly applied to the Si(111)(1 × 1) surface, but its extension to more complex systems, like ultrathin overlayer chemisorbed structures, is simple. In this all-electron approach important data like surface core level energy shifts are easily obtained. Furthermore recent developments of the LMTO method, l...
Tipologia CRIS:
Articolo su rivista
Keywords:
metal-semiconductor interfaces; core level; structural properties
Elenco autori:
Ossicini, Stefano; Bisi, Olmes
Autori di Ateneo:
OSSICINI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/305631
Pubblicato in:
SURFACE SCIENCE
Journal
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