Publication Date:
1991
Short description:
Initial formation of the CaF2 interface: a theoretical study / Ossicini, Stefano; C., Arcangeli; Bisi, Olmes. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 251:(1991), pp. 462-466. [10.1016/0039-6028(91)91035-V]
abstract:
The insulator-semiconductor CaF2-Si(111) interface is studied in the first stages of formation. The linear muffin-tin orbitals method in the atomic-sphere approximation is employed to investigated the F-Ca-Si(111) interface. The analysis of both valence and core electron states gives information about the nature of the bond between Ca, F and Si surface and allows one to interpret the available experimental data.
Iris type:
Articolo su rivista
Keywords:
semiconductor interfaces; electronic properties
List of contributors:
Ossicini, Stefano; C., Arcangeli; Bisi, Olmes
Published in: