단일 또는 다중 게이트 필드 플레이트의 제조

The present invention relates to a method of making single or multiple gate field plates using successive steps of deposition or growth of insulating material, etching of insulating material and metal evaporation on the surface of a field effect transistor. This manufacturing method allows for tight control in field plate operation since the deposition / growth of insulating material is typically a well controllable method. In addition, the insulating material deposited on the device surface does not need to be removed from the device intrinsic region, which typically enables the implementation of field-plated devices without the need for dry / wet etching of low damage insulating materials. The use of multiple gate field plates reduces gate resistance through multiple connections, thus improving the performance of large peripheral and / or ultrafine gate devices.