单个或多个栅极场板的制造

A kind of method of making single or multiple grid field plates, it has utilized following consecutive steps: carry out dielectric deposition/growth, dielectric material etching and metal evaporation on the field-effect transistor surface.Because dielectric deposition/growth is a kind of fully controlled processing, therefore this manufacture method allows strictness control is carried out in field plate work.And the dielectric material that is deposited on the device surface need not to remove from device intrinsic: this makes that in fact need not the etching of low damage dielectric material dry/wet just can realize field plate device.Use a plurality of grid field plates also to reduce resistance, thereby improved the performance of big periphery and/or submicron gate device by a plurality of connections.