高电子迁移率晶体管hemt器件

Embodiment of the disclosure is related to a kind of high electron mobility transistor (HEMT) device.The HEMT device includes：Semiconductor body, including heterojunction structure；Dielectric layer on semiconductor body；Gate electrode；Drain electrode, towards the first side of gate electrode；And source electrode, towards second side relative with the first side of gate electrode；Assist gallery layer, it extends on heterojunction structure between gate electrode and drain electrode, make electrical contact with and be separated by a certain distance with gate electrode with drain electrode, and form the additional conductive path of the electric charge carrier for being flowed between source electrode and drain electrode.