Ambipolar organic light-emitting transistors employing heterojunctions of n-type and p-type materials as the active layer

Academic Article

Publication Date:

2006

Short description:

Ambipolar organic light-emitting transistors employing heterojunctions of n-type and p-type materials as the active layer / Capelli, R; Dinelli, F; Loi, M. A.; Murgia, M; Zamboni, R; Muccini, M. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - 18:33(2006), pp. S2127-S2138. [10.1088/0953-8984/18/33/S28]

Iris type:

Articolo su rivista

List of contributors:

Capelli, R; Dinelli, F; Loi, M. A.; Murgia, M; Zamboni, R; Muccini, M

Authors of the University:

CAPELLI Raffaella

Handle:

https://iris.unimore.it/handle/11380/1176685

Published in:

JOURNAL OF PHYSICS. CONDENSED MATTER

Journal