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  1. Research Outputs

單一或多重閘極場平板之製造

Patent
Publication Date:
2012
Short description:
單一或多重閘極場平板之製造 / Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng. - (2012 Mar 01).
abstract:
This invention relates to semiconductor devices and, more particularly, to the fabrication of single or multiple gate field plates.
Iris type:
Brevetto
Keywords:
HEMT, Power FET, WBG Semiconductors
List of contributors:
Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng
Authors of the University:
CHINI Alessandro
Handle:
https://iris.unimore.it/handle/11380/1199953
Full Text:
https://iris.unimore.it//retrieve/handle/11380/1199953/259785/TWI431674B.pdf
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