在断态期间具有高应力顺应性的hemt晶体管及其制造方法

This disclosure relates to the HEMT transistor and its manufacturing method of high stress compliance during off-state.HEMT includes buffer layer, the hole accommodating layer on buffer layer, heterojunction structure and source electrode on the accommodating layer of hole.Hole accommodating layer is made of p-type doped semiconductor materials, and undoped buffer layer has carbon, and source electrode is directly in electrical contact with hole accommodating layer, allows transmission of the hole accommodating layer by biasing to promote hole from hole accommodating layer to buffer layer.