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  1. Research Outputs

シングルゲートまたはマルチゲートフィールドプレート製造

Patent
Publication Date:
2007
Short description:
シングルゲートまたはマルチゲートフィールドプレート製造 / Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng. - (2007 Mar 08).
abstract:
Single gate or multi-gate plate manufacturing process using sequential steps of depositing / growing dielectric material, etching dielectric material, and depositing metal on the surface of a field effect transistor. Since the manufacturing process is typically a process where the deposition / growth of the dielectric material is very well controlled, field plate operation can be tightly controlled. Furthermore, the dielectric material deposited on the device surface need not be removed from the intrinsic region of the device. For this reason, a field-plated device can be realized without using a material that is less damaged by a dry or wet etching process. Using multi-gate field plates can also reduce gate resistance because of the use of multiple connections, thus improving the performance of large peripheral devices and / or sub-micron gate devices.
Iris type:
Brevetto
Keywords:
HEMT, Power FET, WBG Semiconductors
List of contributors:
Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng
Authors of the University:
CHINI Alessandro
Handle:
https://iris.unimore.it/handle/11380/1199993
Full Text:
https://iris.unimore.it//retrieve/handle/11380/1199993/259875/JP2007505483A.pdf
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