Degradation mechanisms in insulating films on Silicon

Capitolo di libro

Data di Pubblicazione:

1989

Citazione:

Degradation mechanisms in insulating films on Silicon / G., B., Fantini, F. - In: Microlelectronic reliability, volume II, Integrity Assessment and Assurance / E. POLLINO. - STAMPA. - NORWOOD, MA : Artech House, 1989. - ISBN 0890063508. - pp. 47-82

Abstract:

Introduction. Conduction mechanisms in thin oxides. Instabilities due to contamination.

Tipologia CRIS:

Capitolo/Saggio

Keywords:

Reliability. Silicon dioxide. MOSFET.

Elenco autori:

G., Baccarani; Fantini, Fausto

Link alla scheda completa:

https://iris.unimore.it/handle/11380/461528

Titolo del libro:

Microlelectronic reliability, volume II, Integrity Assessment and Assurance