Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices

Academic Article

Publication Date:

2017

Short description:

Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices / Daus, A; Lenarczyk, P; Petti, L; Münzenrieder, N; Knobelspies, S; Cantarella, G; Vogt, C; Salvatore, Ga; Luisier, M; Troster, G. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 3:12(2017), pp. N/A-N/A. [10.1002/aelm.201700309]

Iris type:

Articolo su rivista

Keywords:

defects; high-k dielectrics; memories; synapses; Charge trapping

List of contributors:

Daus, A; Lenarczyk, P; Petti, L; Münzenrieder, N; Knobelspies, S; Cantarella, G; Vogt, C; Salvatore, Ga; Luisier, M; Troster, G

Authors of the University:

CANTARELLA Giuseppe

Handle:

https://iris.unimore.it/handle/11380/1290892

Full Text:

https://iris.unimore.it//retrieve/handle/11380/1290892/509151/manuscriptfinal.pdf

Published in:

ADVANCED ELECTRONIC MATERIALS

Journal