ELECTRONIC-PROPERTIES OF THE Cs-GaAs(110) INTERFACE AT MONOLAYER COVERAGE

The electronic properties of the interface obtained by a monolayer deposition of Cs onto GaAs(110) are studied theoretically by modelling the overlayer with a thin jellium slab of appropriate electron density. The calculations are carried out self-consistently with a pseudopotential approach for two different substrate geometries, corresponding to the ideal and the relaxed configuration of the surface atoms. In both cases a band of Cs-induced states is found in the gap which hybridizes with the dangling and back bond states of the GaAs surface. The change in the work function upon Cs deposition is calculated and found for both the substrate geometries in good agreement with the experimental data. Comparison with electron energy loss and photoemission experiments indicates that the model with the surface in the relaxed configuration is the most appropriate one.