Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface
Academic Article
Publication Date:
1985
Short description:
Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface / E. J., Van Loenen; J. W. M., Frenken; J. F., Van Der Veen; Valeri, Sergio. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 32:(1985), pp. 827-830.
abstract:
The atomic structure at the interface of a 180° rotated single-crystal NiSi2 film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.
Iris type:
Articolo su rivista
Keywords:
atomic structure determination; silicides-silicon interfaces; ion channelling
List of contributors:
E. J., Van Loenen; J. W. M., Frenken; J. F., Van Der Veen; Valeri, Sergio
Published in: