ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110)

A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.