A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Articolo
Data di Pubblicazione:
1994
Citazione:
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON / Abramo, A; Baudry, L; Brunetti, Rossella; Castagne, R; Charef, M; Dessenne, F; Dollfus, P; Dutton, R; Engl, Wl; Fauquembergue, R; Fiegna, C; Fischetti, Mv; Galdin, S; Goldsman, N; Hackel, M; Hamaguchi, C; Hess, K; Hennacy, K; Hesto, P; Higman, Jm; Iizuka, T; Jun,. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 41:(1994), pp. 1646-1654. [10.1109/16.310119]
Abstract:
In this work we have undertaken a comparison of several previously reported computer codes which solve the semi-classical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have been used here to calculate a relatively simple set of transport characteristics, such as the average electron energy. The results have been contributed by researchers from Japan, Europe, and the United States, and the results were subsequently collected by an independent observer. Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions.
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Articolo su rivista
Keywords:
Boltzmann equation; electron transport; silicon
Elenco autori:
Abramo, A; Baudry, L; Brunetti, Rossella; Castagne, R; Charef, M; Dessenne, F; Dollfus, P; Dutton, R; Engl, Wl; Fauquembergue, R; Fiegna, C; Fischetti, Mv; Galdin, S; Goldsman, N; Hackel, M; Hamaguchi, C; Hess, K; Hennacy, K; Hesto, P; Higman, Jm; Iizuka, T; Jun,
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