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Pubblicazioni
IEEE TRANSACTIONS ON ELECTRON DEVICES
Rivista
Codice:
E079923
ISSN:
0018-9383
Dati Generali
Dati Generali
Pubblicazioni (177)
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Ordina Pubblicazioni:
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A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects
Articolo
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis
Articolo
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Articolo
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
Articolo
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
Articolo
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors
Articolo
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State
Articolo
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs
Articolo
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations
Articolo
A Drift-Diffusion/Monte Carlo Simulation Methodology for SiGe HBT Design
Articolo
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Articolo
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
Articolo
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs
Articolo
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks
Articolo
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements
Articolo
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces
Articolo
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles
Articolo
A model of the stress induced leakage current in gate oxides
Articolo
A new compact DC model of floating gate memory cells without capacitive coupling coefficients
Articolo
A new expression for the gain-noise relation of single-carrier avalanche photodiodes with arbitrary staircase multiplication regions
Articolo
A new model of gate capacitance as a simple tool to extract MOS parameters
Articolo
A semi analytical description of the hole band structure in inversion layers for the physically based modelling of pMOS transistors
Articolo
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells
Articolo
AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact
Articolo
AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits
Articolo
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction
Articolo
An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering
Articolo
An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode
Articolo
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation
Articolo
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
Articolo
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation
Articolo
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel
Articolo
Analytical Model for Power Switching GaN-Based HEMT Design
Articolo
Applicability of Macroscopic Transport Models to Decananometer MOSFETs
Articolo
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
Articolo
Assessment of self-induced Joule-heating effect in the I − V readout region of polycrystalline Ge2Sb2Te5 Phase-Change Memory
Articolo
Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks
Articolo
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating
Articolo
Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low Voltages
Articolo
Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells
Articolo
Breakdown walkout in pseudomorphic HEMT's
Articolo
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
Articolo
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis
Articolo
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs
Articolo
Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs
Articolo
Charge-Injection Organic Gauges to Detect Dopamine Down to the Nanomolar Scale
Articolo
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs
Articolo
Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide”
Articolo
Compact Modeling of Thermal Resistance in Bipolar Transistors on Bulk and SOI substrates
Articolo
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks
Articolo
Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects
Articolo
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation
Articolo
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data
Articolo
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors
Articolo
Correlation between Substrate Hot Electron Energy and Homogeneous Degradation in n-MOSFETs
Articolo
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
Articolo
DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate
Articolo
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime
Articolo
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy
Articolo
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Articolo
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs
Articolo
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology
Articolo
Dielectric Absorption Caused by Traps in MIM/MOS Capacitors: A New Model Validated Through TCAD
Articolo
Drawbacks to using NIST electromigration test structures to test bamboo metal lines
Articolo
Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect
Articolo
Effect of the Gap Size on the Source-Side-Injection Efficiency of Split-gate Memory Cells
Articolo
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs
Articolo
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
Articolo
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs
Articolo
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435))
Abstract
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs
Articolo
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model
Articolo
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays
Articolo
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
Articolo
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers
Articolo
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells
Articolo
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)
Articolo
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays
Articolo
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling
Articolo
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations
Articolo
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence
Articolo
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs
Articolo
Flexible In-Ga-Zn-O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing
Articolo
Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields
Articolo
Gate current in ultrathin MOS capacitors: a new model of tunnel current
Articolo
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors
Articolo
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines
Articolo
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability
Articolo
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s.
Articolo
Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors
Articolo
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits
Articolo
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
Articolo
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
Articolo
Influence of impact-ionization-induced base current reversal on bipolar transistor parameters
Articolo
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's
Articolo
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters",
Articolo
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs
Articolo
Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors
Articolo
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes
Articolo
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
Articolo
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
Articolo
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs
Articolo
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation
Articolo
Layout Dependence of CMOS Latchup
Articolo
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs
Articolo
Long-Term Aging of Al2O3Passivated and Unpassivated Flexible a-IGZO TFTs
Articolo
Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application
Articolo
Low Voltage Hot Electrons and Soft-programming Lifetime Prediction in Non-Volatile Memory Cells
Articolo
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs
Articolo
Micro breakdown in small-area ultra-thin gate oxide
Articolo
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics
Articolo
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching
Articolo
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Articolo
Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs
Articolo
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain
Articolo
Modeling Dielectric Breakdown in Scaled Nodes: Challenges and Perspectives
Articolo
Modelling of Light-Addressable Potentiometric Sensors
Articolo
Modelling temperature effects in the DC I-V characteristics of GaAs MESFETs
Articolo
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques
Articolo
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells
Articolo
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs
Articolo
Numerical Analysis of the Gate Voltage Dependence of the Series Resistances and Effective Channel Length in sub-micron GaAs MESFETs
Articolo
On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime
Articolo
On Interface and Oxide Degradation in VLSI MOSFETs, Part II: Fowler-Nordheim Stress Regime
Articolo
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance
Articolo
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs
Articolo
On the Physical Understanding of the kT-Layer Concept in Quasi-Ballistic Regime of Transport in Nanoscale Devices
Articolo
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors
Articolo
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Articolo
On the physical mechanism of the NROM memory erase
Articolo
Oxide Field Dependence of Electron Injection From Silicon into Silicon Dioxide
Articolo
Parameter extraction from I-V characteristics of single MOSFETs
Articolo
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
Articolo
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs
Articolo
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs
Articolo
Plasma-induced Micro Breakdown in small area MOSFETs
Articolo
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor
Articolo
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors
Articolo
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs
Articolo
Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET
Articolo
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs
Articolo
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design
Articolo
Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight
Articolo
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays
Articolo
Reliability testing of InP HEMT's using electrical stress methods
Articolo
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations
Articolo
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation
Articolo
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach
Articolo
Simulation of DC and RF Performance of the Graphene Base Transistor
Articolo
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling
Articolo
Small-signal Analysis of Decananometer bulk and SOI MOSFETs for Analog/Mixed-Signal and RF Applications using the Time-Dependent Monte Carlo Approach
Articolo
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme
Articolo
Statistical Simulation of Leakage Currents in MOS and Flash Memory Devices with a new multi-Phonon Trap-Assisted Tunneling Model
Articolo
Statistical simulations for flash memory reliability analysis and prediction
Articolo
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
Articolo
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Articolo
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs
Articolo
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections
Articolo
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's
Articolo
The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization
Articolo
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise
Articolo
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems
Articolo
Thin-Film Electronics on a Green and Flexible Cellulose-Based Film
Articolo
Three dimensional effects in dynamically triggered CMOS latch-up
Articolo
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs
Articolo
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs
Articolo
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs
Articolo
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain
Articolo
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS
Articolo
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures
Articolo
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits
Articolo
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes
Articolo
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs
Articolo
Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations
Articolo
Verification of Electron Distributions in Silicon by means of Hot-Carrier Luminescence Measurements
Articolo
Voltage snapback in amorphous-GST memory devices: transport model and validation
Articolo
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
Articolo
No Results Found
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