Data di Pubblicazione:
1993
Citazione:
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS / Bacchetta, N., Bisello, D., Canali, C., Da Ros, R., Fuochi, P.g., Fusaro, G., Giraldo, A., Gotra, Y., Paccagnella, A., Verzellesi, G.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 40:(1993), pp. 1602-1609. [10.1109/23.273500]
Abstract:
The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behaviour, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.
Tipologia CRIS:
Articolo su rivista
Keywords:
FOXFET; silicon microstrip detectors; radiation effects; radiation damage.
Elenco autori:
Bacchetta, N; Bisello, D; Canali, Claudio; Da Ros, R; Fuochi, Pg; Fusaro, G; Giraldo, A; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni
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