CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON

Strain measurements were performed by convergent-beam electron diffraction on both plan-view sample and cross-sections of silicon wafers, boron implanted at liquid nitrogen temperature. In the plan-view specimens, the strain value measured in the boron-doped layer agrees with previous X-ray double crystal diffraction analyses. In the cross-sectioned specimens, a profile of the strain was obtained, showing a difference between the boron-doped layer and the end-of-range, interstitial-rich layer. In the latter samples the quantitative agreement with X-ray measurements is reached when extra-relaxation along the thinning direction is taken into account.