Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs

This paper addresses both experimentally and through simulations the effects of a microwave tone on the low-frequency noise properties of GaInP/GaAs heterojunction bipolar transistors. The aim is to contribute to the still unsolved controversy on which modulation strategy should be adopted for the low-frequency noise sources when they should face large signal conditions, as in the cases of oscillators and mixers. An approach similar but not equal to the modulated stationary noise model has been adopted for three different kinds of noise source modulation strategy in the frame of a bias-dependent compact low-frequency noise model.