Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
Contributo in Atti di convegno
Data di Pubblicazione:
2017
Citazione:
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD / Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.. - 134366:(2017), pp. 322-325. ( 63rd IEEE International Electron Devices Meeting, IEDM 2017 San Francisco, CA, USA 2-6 Dec. 2017) [10.1109/IEDM.2017.8268384].
Abstract:
We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley/multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.
Link alla scheda completa:
Titolo del libro:
Technical Digest - International Electron Devices Meeting, IEDM
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