Codice:
E241911
ISSN:
0163-1918
Dati Generali
Pubblicazioni (65)
2D h-BN based RRAM devices
Contributo in Atti di convegnoA Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs
Contributo in Atti di convegnoA novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
Contributo in Atti di convegnoA review of failure modes and mechanisms of GaN-based HEMTs
Contributo in Atti di convegnoA scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
Contributo in Atti di convegnoA simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
Contributo in Atti di convegnoAn Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs
Contributo in Atti di convegnoApplication and benefits of target programming algorithms for ferroelectric HfO2transistors
Contributo in Atti di convegnoBreakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric
Contributo in Atti di convegnoCMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects
Contributo in Atti di convegnoCMOS and interconnect reliability-non-volatile memory reliability
Contributo in Atti di convegnoCharacterization and modelling of low-frequency noise in PCM devices
Contributo in Atti di convegnoCoexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses
Contributo in Atti di convegnoComprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
Contributo in Atti di convegnoConnecting the physical and electrical properties of Hafnia-based RRAM
Contributo in Atti di convegnoCorrelation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs
Contributo in Atti di convegnoDeconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability
Contributo in Atti di convegnoDeuterium Effect on Interface States and SILC Generation in the CHE Stress Conditions: A Comparative Study
Contributo in Atti di convegnoDiagnosis of trapping phenomena in GaN MESFETs
Contributo in Atti di convegnoElectroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model
Contributo in Atti di convegnoEnhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study
Contributo in Atti di convegnoExperimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells
Contributo in Atti di convegnoExperimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
Contributo in Atti di convegnoExperimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Contributo in Atti di convegnoExperimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s
Contributo in Atti di convegnoFlexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors
Contributo in Atti di convegnoImpact Ionization and Photon Emission in MOS Capacitors and FETs
Contributo in Atti di convegnoInvestigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions
Contributo in Atti di convegnoLow-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers
Contributo in Atti di convegnoMetal oxide RRAM switching mechanism based on conductive filament microscopic properties
Contributo in Atti di convegnoMicroscopic understanding and modeling of HfO2 RRAM device physics
Contributo in Atti di convegnoMobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
Contributo in Atti di convegnoMonte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications
Contributo in Atti di convegnoMulti-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
Contributo in Atti di convegnoMulti-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration
Contributo in Atti di convegnoMultiscale modeling of neuromorphic computing: From materials to device operations
Contributo in Atti di convegnoNanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio
Contributo in Atti di convegnoNew insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling
Contributo in Atti di convegnoNovel 3D random-network model for threshold switching of phase-change memories
Contributo in Atti di convegnoOn the experimental determination of channel back-scattering in nanoMOSFETs
Contributo in Atti di convegnoPerformance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
Contributo in Atti di convegnoQuantum electronics and compound semiconductors - HEMTs: Physics and new technologies
Contributo in Atti di convegnoSelf-Healing Ferroelectric Capacitors with ∼ 1000x Endurance Improvement at High Temperatures (85–125°C)
Contributo in Atti di convegnoSimulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain
Contributo in Atti di convegnoSimulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
Contributo in Atti di convegnoSimulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
Contributo in Atti di convegnoSpectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments
Contributo in Atti di convegnoStatistical simulations to inspect and predict data retention and program disturbs in Flash memories
Contributo in Atti di convegnoStudy of low field electron transport in ultra-thin single and double gate SOI MOSFETs
Contributo in Atti di convegnoSubstrate enhanced degradation of cmos devices
Contributo in Atti di convegnoSurface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
Contributo in Atti di convegnoTowards Microscopic Understanding of MOSFET Reliability: the Role of Carrier Energy and Transport Simulations
Contributo in Atti di convegnoTransport in deca-nanometric MOSFETs: from bandstructure to on-currents
Contributo in Atti di convegnoTrapping and High Field Related Issues in GaN Power HEMTs
Contributo in Atti di convegnoVertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC
Contributo in Atti di convegnoNo Results Found