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Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments

Contributo in Atti di convegno
Data di Pubblicazione:
2002
Citazione:
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments / Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; Van Schaijk, R.; Widdershoven, F.. - STAMPA. - (2002), pp. 159-162. ( 2002 IEEE International Devices Meeting (IEDM) San Francisco, CA, usa Dec. 2002) [10.1109/IEDM.2002.1175803].
Abstract:
In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; Van Schaijk, R.; Widdershoven, F.
Autori di Ateneo:
SELMI LUCA
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1162767
Titolo del libro:
Proceedings of International Electron Devices Meeting (IEDM), 2002
Pubblicato in:
TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING
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