A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs
Contributo in Atti di convegno
Data di Pubblicazione:
2004
Citazione:
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs / Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca. - (2004), pp. 605-608. ( International Electron Device Meeting (IEDM) San Francisco, CA, usa December) [10.1109/IEDM.2004.1419234].
Abstract:
In this paper, a Monte-Carlo simulator, including quantum
corrections to the potential and an improved physically
based model for surface roughness scattering is used
to study the electronic transport in double gate (DG) SO1
MOSFETs with Lc down to 14nm. Our results demonstrate
that, for the explored LG values, scattering still controls
the ON current (IDS), which for Lc = 25nm is overestimated
by about a factor of 2 by a ballistic model. By
monitoring the electrons back-scattered at the source, we
discuss the role of the scattering in different parts of the
device.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca
Link alla scheda completa:
Titolo del libro:
Proceedings International Electron Device Meeting (IEDM)
Pubblicato in: