Data di Pubblicazione:
2011
Citazione:
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors / De Michielis, M., Conzatti, F., Esseni, D., Selmi, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:9(2011), pp. 3219-3223. [10.1109/TED.2011.2158606]
Abstract:
Electron- and hole-mobility enhancements in biaxially
strained metal–oxide–semiconductor transistors are still a
matter for active investigation, and this brief presents a critical
examination of a recently proposed interpretation of the experimental
data, according to which the strain significantly modifies
not only the root-mean-square value but also the correlation
length of the surface-roughness spectrum.We present a systematic
comparison between comprehensive numerical simulations and
experiments, which supports such an interpretation.
strained metal–oxide–semiconductor transistors are still a
matter for active investigation, and this brief presents a critical
examination of a recently proposed interpretation of the experimental
data, according to which the strain significantly modifies
not only the root-mean-square value but also the correlation
length of the surface-roughness spectrum.We present a systematic
comparison between comprehensive numerical simulations and
experiments, which supports such an interpretation.
Tipologia CRIS:
Articolo su rivista
Keywords:
Biaxial strain; mobility enhancement; n-MOSFETs; p-MOSFETs; surface roughness scattering
Elenco autori:
De Michielis, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca
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