Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs

Articolo
Data di Pubblicazione:
2003
Citazione:
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs / Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 50:12(2003), pp. 2445-2455. [10.1109/TED.2003.819256]
Tipologia CRIS:
Articolo su rivista
Keywords:
Mobility modeling; Scattering mechanisms; Silicon thickness fluctuations; SOI MOSFETs; Ultrathin silicon thicknesses;
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1162951
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal