An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode

Articolo
Data di Pubblicazione:
2003
Citazione:
An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode / Esseni, David; M., Mastrapasqua; G. K., Celler; C., Fiegna; Selmi, Luca; E., Sangiorgi. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 50:3(2003), pp. 802-808. [10.1109/TED.2002.807444]
Tipologia CRIS:
Articolo su rivista
Keywords:
Deep-submicron MOSFETs; Double-gate; Lowfield mobility; Silicon thickness dependence; Ultrathin SOI MOSFETs;
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1162958
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal