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Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers

Contributo in Atti di convegno
Data di Pubblicazione:
2010
Citazione:
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers / Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - (2010), pp. 724-727. ( 2010 IEEE International Electron Devices Meeting, IEDM 2010 San Francisco, CA, usa Dicembre) [10.1109/IEDM.2010.5703461].
Abstract:
In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Autori di Ateneo:
PALESTRI Pierpaolo
SELMI LUCA
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1163012
Titolo del libro:
International Electron Devices Meeting (IEDM) Technical Digest
Pubblicato in:
TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING
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