Modelling temperature effects in the DC I-V characteristics of GaAs MESFETs

This paper presents a simple model to account for the main temperature effects influencing the dc performance of GaAs MESFET's. The model is based on a consistent solution of heat flow and current equations, that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and dc measurements performed on conventional devices as well as on suitable test structures.