Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study
Contributo in Atti di convegno
Data di Pubblicazione:
2004
Citazione:
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study / S., E., Esseni, D., Palestri, P., C., F., Selmi, L., E., S.. - STAMPA. - (2004), pp. 609-612. (International Electron Devices Meeting (IEDM) San Francisco, CA, usa Dec. 2004) [10.1109/IEDM.2004.1419235].
Abstract:
In this work we have simulated the ION and its ballistic limit I-BL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node, by using a Full-Band, self-consistent Monte Carlo simulator with quantum mechanical corrections.
Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
S., Eminente; Esseni, David; Palestri, Pierpaolo; C., Fiegna; Selmi, Luca; E., Sangiorgi
Link alla scheda completa:
Titolo del libro:
Proceedings of International Electron Devices Meeting (IEDM), 2004
Pubblicato in: