Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
Contributo in Atti di convegno
Data di Pubblicazione:
2011
Citazione:
Simulation of graphene nanoscale RF transistors including scattering
and generation/recombination mechanisms / Paussa, A; Geromel, M; Palestri, Pierpaolo; Bresciani, M; Esseni, David; Selmi, Luca. - (2011), pp. 271-274. ( 2011 IEEE International Electron Devices Meeting, IEDM 2011 Washington, DC, usa 2011) [10.1109/IEDM.2011.6131536].
Abstract:
We present a Monte Carlo simulator for RF graphene FETs
including the dominant scattering mechanisms and a simple
model for band-to-band tunneling. We found that in state-ofthe-
art devices scattering is relevant and degrades the cut-off
frequency compared to the predictions of ballistic models.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Paussa, A; Geromel, M; Palestri, Pierpaolo; Bresciani, M; Esseni, David; Selmi, Luca
Link alla scheda completa:
Titolo del libro:
Proceedings of the International Electron Device Meeting (IEDM) 2011
Pubblicato in: