On the experimental determination of channel back-scattering in nanoMOSFETs
Contributo in Atti di convegno
Data di Pubblicazione:
2007
Citazione:
On the experimental determination of channel back-scattering in nanoMOSFETs / Zilli, M., Palestri, P., Esseni, D., Selmi, L.. - (2007), pp. 105-108. (2007 IEEE International Electron Devices Meeting, IEDM Washington, DC, usa 10-12/12/2007) [10.1109/IEDM.2007.4418875].
Abstract:
By using accurate Multi-Subband-Monte-Carlo simulations of
quasi-ballistic transport we carry out a detailed re-examination
of the experimental extraction procedure for the ballistic-ratio
BR=ID/IBAL in nanoMOSFETs proposed in [1]. It is found
that the ballistic-ratio extracted applying this procedure to the
simulated drain current severely underestimates the BR extracted
by directly compare the simulated ID and IBAL. This
is mainly due to inaccurate determination of the temperature
dependence of the inversion charge. It is suggested that this
limitation of the extraction procedure may explain the apparent
lack of improvement in the ballisticity with the geometrical
scaling.
quasi-ballistic transport we carry out a detailed re-examination
of the experimental extraction procedure for the ballistic-ratio
BR=ID/IBAL in nanoMOSFETs proposed in [1]. It is found
that the ballistic-ratio extracted applying this procedure to the
simulated drain current severely underestimates the BR extracted
by directly compare the simulated ID and IBAL. This
is mainly due to inaccurate determination of the temperature
dependence of the inversion charge. It is suggested that this
limitation of the extraction procedure may explain the apparent
lack of improvement in the ballisticity with the geometrical
scaling.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Zilli, Massimiliano; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Link alla scheda completa:
Titolo del libro:
Proceedings of International Electron Devices Meeting (IEDM)
Pubblicato in: