Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
Contributo in Atti di convegno
Data di Pubblicazione:
2013
Citazione:
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs / Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - STAMPA. - (2013), pp. 5.2.1-5.2.4. ( 2013 IEEE International Electron Devices Meeting, IEDM 2013 Washington, DC, usa 9-11 Dec. 2013) [10.1109/IEDM.2013.6724565].
Abstract:
This paper presents a new model for the surface roughness
(SR) limited mobility (μSR). The model is suitable for bulk,
for ultra thin body (UTB) and for Hetero-Structure Quantum
Well (HS-QW) MOSFETs. Comparison with experimental
mobility for Si bulk MOSFETs shows that a good agreement
with measured mobility can be obtained with a r.m.s. value
of the SR spectrum close to several AFM and TEM measurements.
For III-V MOSFETs with small well thickness the
proposed model shows a weaker mobility degradation with
respect to the Tw6 behavior.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Link alla scheda completa:
Titolo del libro:
IEEE International Device Meeting
Pubblicato in: