Statistical simulations to inspect and predict data retention and program disturbs in Flash memories
Contributo in Atti di convegno
Data di Pubblicazione:
2003
Citazione:
Statistical simulations to inspect and predict data retention and program disturbs in Flash memories / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2003), pp. 165-168. ( Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International Washington, DC, usa 7-10 December 2003).
Abstract:
A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict data retention and program disturbs of state-of-the-art flash memories, and to correlate oxide characterization outputs (density, cross section, energy level of defects) to flash memory reliability. Physical mechanisms inducing the largest threshold voltage (VT) degradation are explained, and tunnel oxide scaling effects on flash reliability are predicted.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
Flash memories; integrated circuit modelling; integrated circuit reliability; leakage currents; statistical analysis
Elenco autori:
Larcher, Luca; Pavan, Paolo
Link alla scheda completa:
Titolo del libro:
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Pubblicato in: