Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s
Contributo in Atti di convegno
Data di Pubblicazione:
2002
Citazione:
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s / Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Meneghesso, G.; Chini, Alessandro; Mishra, U. K.; Canali, Claudio; Zanoni, E.. - STAMPA. - (2002), pp. 689-692. ( 2002 IEEE International Devices Meeting (IEDM) San Francisco, CA, usa Dec. 2002) [10.1109/IEDM.2002.1175932].
Abstract:
RF current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
GaN HEMTs; current collapse; DC to RF dispersion; numerical device simulation.
Elenco autori:
Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Meneghesso, G.; Chini, Alessandro; Mishra, U. K.; Canali, Claudio; Zanoni, E.
Link alla scheda completa:
Titolo del libro:
IEDM Technical Digest
Pubblicato in: