A review of failure modes and mechanisms of GaN-based HEMTs

Contributo in Atti di convegno
Data di Pubblicazione:
2007
Citazione:
A review of failure modes and mechanisms of GaN-based HEMTs / E., Zanoni; G., Meneghesso; Verzellesi, Giovanni; F., Danesin; M., Meneghini; F., Rampazzo; A., Tazzoli; F., Zanon. - STAMPA. - (2007), pp. 381-384. ( 2007 IEEE International Electron Devices Meeting, IEDM Washington, DC, usa 2007) [10.1109/IEDM.2007.4418952].
Abstract:
Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
GaN HEMTs; high electric field reliability; degradation effects; degradation mechanisms.
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/420815
Titolo del libro:
IEDM Technical Digest
Pubblicato in:
TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING
Series