Data di Pubblicazione:
2020
Citazione:
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems / Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 67:10(2020), pp. 4372-4378. [10.1109/TED.2020.3018095]
Tipologia CRIS:
Articolo su rivista
Keywords:
Al2O3; capacitance-voltage (C-V ); conductance-voltage (G-V ); defects; InGaAs; interface traps; multifrequency; multiphonon; nonradiative multiphonon (NMP); oxide traps; quantization; quantum effects; spectroscopy; TCAD; tunneling.;
Elenco autori:
Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.
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