A new model for tunneling conduction in ultra-thin dielectrics

A new simple model for tunnel electron injection into oxides has been proposed, alterative to the conventionQ! FowlerNordheim expression. The latter fails to predict oscillations in the curren't-voltage curves in ultra-thin oxides, due to the limits of the WKB approximation. Our model nicely fits the experimental I-V results and can be used to investigate ultra-thin film characteristics. Finally, we propose an empirical law correlating oxide thickness to the I-V oscillation period.