Codice:
E212584
ISSN:
1930-8876
Dati Generali
Pubblicazioni (48)
20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT
Contributo in Atti di convegnoA Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
Contributo in Atti di convegnoA Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps
Contributo in Atti di convegnoA comparison between semi-classical and quantum-mechanical escape-times for gate current calculations
Contributo in Atti di convegnoA new model for tunneling conduction in ultra-thin dielectrics
Contributo in Atti di convegnoA new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design
Contributo in Atti di convegnoAlN-based MEMS devices for vibrational energy harvesting applications
Contributo in Atti di convegnoAnalysis of RTN and cycling variability in HfO2 RRAM devices in LRS
Contributo in Atti di convegnoAnalysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires
Contributo in Atti di convegnoAssessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET
Contributo in Atti di convegnoBreakdown investigation in GaN-based MIS-HEMTdevices
Contributo in Atti di convegnoCarrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool
Contributo in Atti di convegnoCathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors
Contributo in Atti di convegnoCharacterization and Modeling of long term retention in SONOS Non Volatile Memories
Contributo in Atti di convegnoCharacterization of anomalous Random Telegraph Noise in Resistive Random Access Memory
Contributo in Atti di convegnoClosed-form transition rate in hopping conduction
Contributo in Atti di convegnoConnecting RRAM Performance to the Properties of the Hafnia-based Dielectrics
Contributo in Atti di convegnoDefects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide
Contributo in Atti di convegnoDoes Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ?
Contributo in Atti di convegnoEnergy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model
Contributo in Atti di convegnoExperimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs
Contributo in Atti di convegnoExperimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM
Contributo in Atti di convegnoFabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility
Contributo in Atti di convegnoGate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells
Contributo in Atti di convegnoImpact ionization phenomena in AlGaAs/GaAs HBTs
Contributo in Atti di convegnoImpact of Device Geometry of the Fin Electron-Hole Bilayer Tunnel FET
Contributo in Atti di convegnoImpact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories
Contributo in Atti di convegnoInvestigation on convergence and stability of self-consistent Monte Carlo device simulations
Contributo in Atti di convegnoMeasurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors
Contributo in Atti di convegnoModeling the Dynamic Self-Heating of PCM
Contributo in Atti di convegnoMonte Carlo simulation of program and erase charge distribution in NROM devices
Contributo in Atti di convegnoObservation of a new hole gate current component in p(+)-poly gate p-channel MOSFET's
Contributo in Atti di convegnoOn the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices
Contributo in Atti di convegnoOn the RESET-SET transition in Phase Change Memories
Contributo in Atti di convegnoPerformance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications
Contributo in Atti di convegnoPhonon Limited Uniform Transport in Bilayer Graphene Transistors
Contributo in Atti di convegnoPhoton emission from sub-micron p-channel mosfets biased at high fields
Contributo in Atti di convegnoProbing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization
Contributo in Atti di convegnoRandom Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS
Contributo in Atti di convegnoRandom Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States
Contributo in Atti di convegnoSIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model
Contributo in Atti di convegnoSelf-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model
Contributo in Atti di convegnoThe Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
Contributo in Atti di convegnoTrading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
Contributo in Atti di convegnoTwo Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices
Contributo in Atti di convegnoWelcome to ESSDERC 2014
Contributo in Atti di convegnoNo Results Found