Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's

In this paper, we report on the early increase of the de current gain (burn-in effect) due to the electrical stress of carbon doped GaInP/GaAs heterojunction bipolar transistors (HBT's). Devices featuring different passivation layers, base doping, and emitter widths were investigated. The obtained data demonstrate that the burn-in effect is due to a reduction of the surface recombination located at the extrinsic base surface, around the emitter perimeter. It is concluded that the recombination centers are related to defects at the passivation/semiconductor interface and that, during the stress, they are passivated by hydrogen atoms released from C-H complexes.