Data di Pubblicazione:
2008
Citazione:
On the RESET-SET transition in Phase Change Memories / G., Puzzilli; F., Irrera; Padovani, Andrea; Pavan, Paolo; Larcher, Luca; A., Arya; Della Marca, Vincenzo; A., Pirovano. - STAMPA. - (2008), pp. 158-161. ( ESSDERC 2008 - 38th European Solid-State Device Research Conference Edinburgh, Scotland, gbr 15-19 Sept. 2008) [10.1109/ESSDERC.2008.4681723].
Abstract:
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
chalcogenide glasses; phase change memories; semiconductor storage; RESET-SET transition; amorphous-crystalline state
Elenco autori:
G., Puzzilli; F., Irrera; Padovani, Andrea; Pavan, Paolo; Larcher, Luca; A., Arya; Della Marca, Vincenzo; A., Pirovano
Link alla scheda completa:
Titolo del libro:
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Pubblicato in: