Skip to Main Content (Press Enter)

Logo UNIMORE
  • ×
  • Home
  • Corsi
  • Insegnamenti
  • Professioni
  • Persone
  • Pubblicazioni
  • Strutture
  • Terza Missione
  • Attività
  • Competenze

UNI-FIND
Logo UNIMORE

|

UNI-FIND

unimore.it
  • ×
  • Home
  • Corsi
  • Insegnamenti
  • Professioni
  • Persone
  • Pubblicazioni
  • Strutture
  • Terza Missione
  • Attività
  • Competenze
  1. Pubblicazioni

Compact Modeling of Thermal Resistance in Bipolar Transistors on Bulk and SOI substrates

Articolo
Data di Pubblicazione:
2002
Citazione:
Compact Modeling of Thermal Resistance in Bipolar Transistors on Bulk and SOI substrates / Pacelli, A.; Palestri, Pierpaolo; Mastrapasqua, M.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 49:6(2002), pp. 1027-1033. [10.1109/TED.2002.1003724]
Abstract:
Analytical expressions for the thermal resistance of bipolar transistors on bulk and SOI substrates are presented. The models are derived on the basis of intuitive physical pictures and validated by comparison with experimental data and three-dimensional (3D) device simulation. The effect of bulk and SOI substrates, shallow- and deep-trench isolation, and multiple emitter fingers is accounted for. All models are suitable for both hand calculations and computer-aided design.
Tipologia CRIS:
Articolo su rivista
Keywords:
Bipolar transistors; compact models; self-heating; silicon-on-insulator (SOI); thermal resistance; trench isolation
Elenco autori:
Pacelli, A.; Palestri, Pierpaolo; Mastrapasqua, M.
Autori di Ateneo:
PALESTRI Pierpaolo
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1328089
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal
  • Utilizzo dei cookie

Realizzato con VIVO | Designed by Cineca | 26.4.5.0