Microscopic understanding and modeling of HfO2 RRAM device physics

Contributo in Atti di convegno
Data di Pubblicazione:
2012
Citazione:
Microscopic understanding and modeling of HfO2 RRAM device physics / Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker. - ELETTRONICO. - (2012), pp. 20.1.1-20.1.4. ( 2012 IEEE International Electron Devices Meeting, IEDM 2012 San Francisco, CA, USA 10-12 Dicembre 2012) [10.1109/IEDM.2012.6479077].
Abstract:
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
RRAM; hafnium dioxide (HfO2); trap-assisted tunneling (TAT); RRAM modeling
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/902289
Titolo del libro:
2012 International Electron Devices Meeting TECHNICAL DIGEST
Pubblicato in:
TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING
Series