Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs
Articolo
Data di Pubblicazione:
2016
Citazione:
Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs / Dalla Betta, G. F.; Batignani, G.; Benkechkache, M. A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Fabris, L.; Forti, F.; Grassi, M.; Latreche, S.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, L.; Paoloni, E.; Ratti, L.; Re, V.; Rizzo, G.; Traversi, G.; Vacchi, C.; Verzellesi, Giovanni; Xu, H.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 824:(2016), pp. 384-385. [10.1016/j.nima.2015.08.027]
Abstract:
We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.
Tipologia CRIS:
Articolo su rivista
Keywords:
Active edges; Breakdown voltage; Silicon detectors; TCAD simulations; Instrumentation; Nuclear and High Energy Physics
Elenco autori:
Dalla Betta, G. F.; Batignani, G.; Benkechkache, M. A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Fabris, L.; Forti, F.; Grassi, M.; Latreche, S.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, L.; Paoloni, E.; Ratti, L.; Re, V.; Rizzo, G.; Traversi, G.; Vacchi, C.; Verzellesi, Giovanni; Xu, H.
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