Data di Pubblicazione:
2005
Citazione:
First principles simulations of SiC-based interfaces / Catellani, A; Cicero, G.; Righi, Maria Clelia; Pignedoli, Carlo Antonio. - 483-485:(2005), pp. 541-546. ( 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 Bologna, ita AUG 31-SEP 04, 2004) [10.4028/www.scientific.net/MSF.483-485.541].
Abstract:
We review some recent investigations on prototypical SiC-based interfaces, as obtained from first-principles molecular dynamics. We discuss the interface with vacuum, and the role played by surface reconstruction in SiC homoepitaxy, and adatom diffusion. Then we move to the description of a buried, highly mismatched semiconductor interface, the one which occurs between SiC and Si, its natural substrate for growth: in this case, the mechanism governing the creation of a network of dislocations at the SiC/Si interface is presented, along with a microscopic description of the dislocation core. Finally, we describe a template solid/liquid interface, water on SiC: based on the predicted structure of SiC surfaces covered with water molecules, we propose (i) a way of nanopatterning cubic SiC(001) for the attachment of biomolecules and (ii) experiments to reveal the local geometry of adsorbed water.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
silicon carbide; dislocations; solid-solid and liquid-solid interfaces; structure and energetics; chemisorption/physisorption; adsorbate structures; molecular dynamics
Elenco autori:
Catellani, A; Cicero, G.; Righi, Maria Clelia; Pignedoli, Carlo Antonio
Link alla scheda completa:
Titolo del libro:
SILICON CARBIDE AND RELATED MATERIALS 2004
Pubblicato in: