Publication Date:
1996
Short description:
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's / Canali, Claudio; Pavan, Paolo; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, A; Vendrame, L; Zanoni, E; Zandler, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 43:(1996), pp. 1769-1777. [10.1109/16.542420]
abstract:
We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities, Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission, A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment.
Iris type:
Articolo su rivista
Keywords:
HBT; COMPOUND SEMICONDUCTORS; IMPACT IONIZATION
List of contributors:
Canali, Claudio; Pavan, Paolo; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, A; Vendrame, L; Zanoni, E; Zandler, G.
Published in: