A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs

In this paper we present a novel defect spectroscopy technique to investigate the properties of high-κ metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-κ stacks on III-V materials. The proposed technique is applied to investigate the properties of high-κ stacks of InGaAs MOSFETs.