METASTABLE TRANSITION OF EL2 IN GAAS - THE ELECTRON-PHONON-COUPLING CHANNEL

Articolo
Data di Pubblicazione:
1994
Citazione:
METASTABLE TRANSITION OF EL2 IN GAAS - THE ELECTRON-PHONON-COUPLING CHANNEL / Caldas, Mj; Molinari, Elisa. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 493-496. [10.1016/0038-1098(94)90743-7]
Abstract:
We propose a theoretical approach to the general problem of phonon-coupling between localised electronic states in semiconductors, which takes advantage of results from first-principles calculations. Application of this scheme to the isolated antisite defect As(Ga) in GaAs reveals that electron-phonon coupling can provide the mechanism for the metastable transition characteristic of EL2.
Tipologia CRIS:
Articolo su rivista
Keywords:
ELECTRON PHONON COUPLING CHANNEL
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/10796
Pubblicato in:
SOLID STATE COMMUNICATIONS
Journal