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  1. Pubblicazioni

Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation

Articolo
Data di Pubblicazione:
2017
Citazione:
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation / Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 64:5(2017), pp. 2185-2192. [10.1109/TED.2017.2673867]
Abstract:
The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a drawback for memory applications, can fruitfully be exploited to implement primitives for hardware security. By applying a set voltage pulse, whose amplitude corresponds to a switching probability of 50%, to a memory array initially placed in the full-reset state, half of the memory bits are statistically switched and programmed to state '1,' whereas the remainder of the bits persist in state '0.' Such a natural randomness can be exploited to create a true random number generator (TRNG), which is the building block of cryptographic applications. The feasibility of a TRNG by means of self-heating PCM cells is assessed and demonstrated through simulations based upon the random network model, i.e., a microscopic transport model previously developed and tested by the authors.
Tipologia CRIS:
Articolo su rivista
Keywords:
Random number generator; Semiconductor device modeling; Semiconductor memories; Electronic, Optical and Magnetic Materials; Electrical and Electronic Engineering
Elenco autori:
Piccinini, Enrico; Brunetti, Rossella; Rudan, Massimo
Autori di Ateneo:
BRUNETTI Rossella
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1134745
Link al Full Text:
https://iris.unimore.it//retrieve/handle/11380/1134745/143251/TED%20revised_V2.pdf
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal
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