A stochastic approach to failure analysis in electromigration phenomena

Resistance degradation of thin film conductors is studied within a stochastic approach based on a random resistor network. Both defect generation and recovery are considered and assumed to depend on the stressing current. The main features of available experiments are well reproduced thus providing a unified interpretation of degradation processes and failure in terms of physical parameters. (C) 1999 Elsevier Science Ltd. All rights reserved.